Semiconductor device with flip chip bonding pads and manufacture thereof
US6218281A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Nov 16, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate is prepared which has a principal surface, an exposed pad made of conductive material being formed in a partial area of the principal surface, and the other area of the principal surface being covered with a first insulating film. A base conductive film is formed on the first insulating film and the pad. A photoresist film having a thickness of 50 .mu.m or thicker is formed on the base conductive film. An opening is formed through the photoresist film in an area corresponding to the pad to expose a partial surface area of the base conductive film. A conductive bump electrode is deposited on the base conductive film exposed on a bottom of the opening. The photoresist film is removed. This method is suitable for making a fine pitch between bump electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.