Copper dendrite prevention by chemical removal of dielectric
US6218290A · kind A · utility
27Cited by
2References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 25, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Nov 25, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The formation and/or growth of dendrites emanating from Cu or Cu alloy lines into a bordering open dielectric field are prevented or substantially reduced by chemically removing a portion of the surface from the dielectric field and between the lines after CMP. Embodiments include removing up to 20 .ANG. of silicon oxide by buffing with a solution containing ammonium fluoride, diammonium hydrogen citrate, triammonium citrate and dionized water.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.