Batch processing for semiconductor wafers to form aluminum nitride and titanium aluminum nitride
US6218293A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 13, 1998 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | Nov 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76832
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process used during the formation of a semiconductor device comprises the steps of placing a plurality of semiconductor wafers each having a surface into a chamber of a batch wafer processor such as a diffusion furnace. The wafers are heated to a temperature of between about 300.degree. C. and about 550.degree. C. With the wafers in the chamber, at least one of ammonia and hydrazine is introduced into the chamber, then a precursor comprising trimethylethylenediamine tris(dimethylamino)titanium and/or triethylaluminum is introduced into the chamber. In the chamber, a layer comprising aluminum nitride is simultaneously formed over the surface of each wafer. The inventive process allows for the formation of aluminum nitride or titanium aluminum nitride over the surface of a plurality of wafers simultaneously. A subsequent anneal of the aluminum nitride layer or the titanium aluminum nitride layer can be performed in situ.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.