Tungsten-filled deep trenches
US6218298A · kind A · utility
53Cited by
4References
1Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | May 19, 1999 |
| Grant date | Apr 17, 2001 |
| Priority date | — |
| Expiry date | May 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76898
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A satisfactory conductive fill of a vertical trench of aspect ratio of at least 20 to 1 in a silicon substrate is obtained by heating the substrate to a temperature of about 375.degree. C. or less in a chamber for chemical vapor deposition along with a mixture of WF.sub.6, H.sub.2, and SiH.sub.4 for filling the trench with tungsten. Also, W(CO).sub.6 may be substituted for the WF.sub.6.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.