Patent · US Expired

Method of chemical mechanical polishing a metal layer

US6218306A · kind A · utility

12Cited by

14References

13Claims

0Family size

Assignee

Applied Materials, Inc. · US

Inventors

Boris Fishkin · Redwood City, US
Kapila Wijekoon · Santa Clara, US
Ronald Lin · San Jose, US

Key dates

Filing date	Apr 22, 1998
Grant date	Apr 17, 2001
Priority date	—
Expiry date	Apr 22, 2018

Classification

Technology area (CPC Y)Emerging Cross-Sectional Technologies
CPC primaryY10S438/959
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

In the formation of metal vias, plugs or lines, a metal layer is deposited onto a non-planar non-metallic surface of a substrate. The metal layer is chemical mechanical polished with a first polishing pad until the metal layer is substantially planarized and a residual layer having a thickness about equal to the depth of potential microscratches, between about 200 and 1000 angstroms, remains over the non-metallic surface. The residual layer is chemical mechanical polished with a second, softer polishing pad until the non-metallic surface is exposed and the residual layer is removed.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.