Method of in-situ cleaning for LPCVD teos pump
US6221164A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 25, 2000 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jan 25, 2020 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/4407
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In one embodiment, the present invention relates to a method of cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein involving contacting the low pressure chemical vapor deposition apparatus with a composition containing at least one lower alcohol. In another embodiment, the present invention relates to a system for cleaning a low pressure chemical vapor deposition apparatus having TEOS material build-up therein, containing a supply of a composition comprising at least one lower alcohol; an injection port for introducing the composition comprising at least one lower alcohol into the low pressure chemical vapor deposition apparatus; and a pump/vacuum system for removing crystallized TEOS material build-up from the low pressure chemical vapor deposition apparatus.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.