Apparatus for improving the performance of a temperature-sensitive etch
US6221205A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 2000 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Apr 28, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The temperature of a dry etch process of a semiconductor substrate in a plasma etch chamber is controlled to maintain selectivity while also providing a high etch rate by introducing one or more cooling steps into the etch process. To maintain selectivity of the etch as well as a high rate of etch, the formation of plasma is terminated prior to exceeding a predetermined maximum temperature at at least one selected location in the chamber. The temperature at the selected location is reduced prior to the resumption of plasma flow and etching. The plasma etch is then continued, and may optionally be terminated again to permit cooling, as needed, until etching has been completed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.