Method of making a microelectronic structure

US6221757A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Sven Schmidbauer · Dresden, DE
• Alexander Ruf · Dresden, DE
• Florian Schnabel · Ehrenkirchen, DE
• Mark Hoinkis · Fishkill, US
• Stefan Weber · Fishkill, US

Key dates

• Filing date: Jan 20, 1999
• Grant date: Apr 24, 2001
• Expiry date: Jan 20, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

A microelectronic structure is formed on a first layer or a substrate. The first layer or substrate is formed with grooves and contact openings. A metal nitride layer of TiN or WN covers the first layer or the substrate at least partially. An alpha-phase tantalum layer is deposited on top of the metal nitride layer. Finally, a metal is deposited to completely fill the grooves and the contact openings.