Method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber
US6222991A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 23, 1999 |
| Grant date | Apr 24, 2001 |
| Priority date | — |
| Expiry date | Jul 23, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/6833
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor processing apparatus and process is disclosed which is capable of degassing a semiconductor substrate and also orienting the substrate in the same vacuum chamber. The apparatus includes an electrostatic clamping structure for retaining the entire undersurface of a semiconductor substrate in thermal communication therewith in the vacuum chamber, a heater located within the electrostatic clamping structure for heating the electrostatically clamped substrate to degas it, a rotation mechanism for imparting rotation to the substrate in the vacuum chamber, and a detector for detecting the rotational alignment of the substrate in response to the rotation of the substrate. In a preferred embodiment, the substrate is rotated to rotationally align it as it is being heated to degas it.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.