Polymer and a forming method of a micro pattern using the same
US6225020A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 29, 1999 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Apr 29, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/039
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to a polymer represented by following Formula 1 and a method of forming a micro pattern using the same: ##STR1## wherein R.sub.1 is a C.sub.1 -C.sub.10 straight- or branched-chain substituted alkyl group, or a benzyl group; R.sub.2 is C.sub.1 -C.sub.10 primary, secondary or tertiary alcohol group; m and n independently represent a number from 1 to 3; and X, Y and Z are the respective polymerization ratios of the co-monomers. The photoresist polymer according to the present invention is suitable for forming an ultra-micro pattern such as used in 4 G or 16 G DRAM semiconductor devices using a light source such as ArF, an e-beam, EUV, or an ion-beam.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.