Semiconductor device having metal gate electrode and titanium or tantalum nitride gate dielectric barrier layer and process of fabrication thereof
US6225168A · kind A · utility
160Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jun 4, 1998 |
| Grant date | May 1, 2001 |
| Priority date | — |
| Expiry date | Jun 4, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28194
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semiconductor devices having a metal gate electrode and a titanium or tantalum nitride gate dielectric barrier layer and processes for fabricating such devices are provided. The use of a metal gate electrode along with a titanium or tantalum nitride gate dielectric barrier layer can, for example, provide a highly reliable semiconductor device having an increased operating speed as compared to conventional transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.