Two-slurry CMP polishing with different particle size abrasives
US6227949A · kind A · utility
11Cited by
7References
5Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 3, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Jun 3, 2019 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB24B37/042
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method for chemical mechanical polishing (CMP) of a wafer having a top layer to be polished is disclosed. The method comprises the steps of: using a CMP apparatus to polish the top layer using a first slurry having abrasive particles of a first size; and using the CMP apparatus to polish the top layer using a second slurry having abrasive particles of a second size, the second size being smaller than the first size.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.