Method for manufacturing metal sputtering target for use in DC magnetron so that target has reduced number of conduction anomalies

US6228186A · kind A · utility

Assignee

• Applied Materials, Inc. · US

Inventors

• Vikram Pavate · San Mateo, US
• Keith J. Hansen · San Jose, US
• Glen T. Mori · Gilroy, US
• Murali Narasimhan · San Jose, US
• Seshadri Ramaswami · San Jose, US
• Jaim Nulman · Palo Alto, US

Key dates

• Filing date: Oct 14, 1999
• Grant date: May 8, 2001
• Expiry date: Oct 14, 2019

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10T29/49988
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

Improved targets for use in DC_magnetron sputtering of aluminum or like metals are disclosed for forming metallization films having low defect densities. Methods for manufacturing and using such targets are also disclosed. Conductivity anomalies such as those composed of metal oxide inclusions can induce arcing between the target surface and the plasma. The arcing can lead to production of excessive deposition material in the form of splats or blobs. Reducing the content of conductivity anomalies and strengthening the to-be-deposited material is seen to reduce production of such splats or blobs. Other splat limiting steps include smooth finishing of the target surface and low-stress ramp up of the plasma.