Magnetron for low pressure, full face erosion
US6228235A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 2, 1999 |
| Grant date | May 8, 2001 |
| Priority date | — |
| Expiry date | Mar 2, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3455
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for controlling the operation of a magnetron source for sputtering a surface of a target in a vacuum chamber, the method including the steps of: during a low pressure phase of sputtering, causing a magnetic field generated by a the magnetron source to be confined primarily to an inner region of the surface of the target so as to reduce leakage of electrons away from the target during sputtering; and during a subsequent high pressure phase of sputtering, causing the magnetic field generated by the magnet assembly to extend into the outer region of the surface of the target so as to sputter material from the outer region of the surface of the target. The pressure of the high pressure phase of sputtering is higher than the pressure of the low pressure phase of sputtering.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.