Apparatus and method for minimizing diffusion in stacked capacitors formed on silicon plugs

US6228701A · kind A · utility

Assignees

• Seimens Aktiengesellschaft · DE
• International Business Machines Corporation · US

Inventors

• Christine Dehm · Koblenzer Straße, DE
• Stephen K. Loh · Fishkill, US
• Carlos Mazure · Austin, US

Key dates

• Filing date: Dec 19, 1997
• Grant date: May 8, 2001
• Expiry date: Dec 19, 2017

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S438/922

Abstract

Methods and apparatus for fabricating stacked capacitor structures, which include barrier layers, are disclosed. According to one aspect of the present invention, a method for reducing outdiffusion within an integrated circuit includes forming a gate oxide layer over a substrate, and further forming a silicon plug over a portion of the gate oxide layer. A silicon dioxide layer is then formed over the gate oxide layer, and is arranged around the silicon plug. A first barrier film is formed over the silicon plug, and a dielectric layer is formed over the silicon dioxide layer. In one embodiment, forming the first barrier film includes forming a first oxide layer over the silicon plug, nitridizing the first oxide layer, and etching the nitridized first oxide layer.