Semiconductor integrated capacitive acceleration sensor and relative fabrication method
US6232140A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Dec 10, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01P2015/0814
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The acceleration sensor is formed in a monocrystalline silicon wafer forming part of a dedicated SOI substrate presenting a first and second monocrystalline silicon wafer separated by an insulting layer having an air gap. A well is formed in the second wafer over the air gap and is subsequently trenched up to the air gap to release the monocrystalline silicon mass forming the movable mass of the sensor; the movable mass has two numbers of movable electrodes facing respective pluralities of fixed electrodes. In the idle condition, each movable electrode is separated by different distances from the two fixed electrodes facing the movable electrode.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.