Method for forming a dummy active pattern
US6232161A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 15, 1998 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Dec 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76229
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a mask comprises a first pattern in respective of active areas, and a second pattern in respective of dummy active areas. After removing the first pattern, the profiles of the dummy active areas are enlarged. The N-well boundary and the P-well boundary of the second pattern is respectively shielded to form a first composed pattern and a second composed pattern comprising the larger dummy active areas and a shielding pattern. The dummy active areas on the substrate are shielded by the patterns of the embodiment during the process of ion implantation. Thus the resistivity of the dummy active areas is increased, whereby the parasitic capacitance can be prevented from being too large and affecting the performance of the devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.