Semiconductor interconnect interface processing by high temperature deposition
US6232230A · kind A · utility
31Cited by
7References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jan 5, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Jan 5, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method is provided for forming adhesion/barrier/conductor layers on semiconductor wafers in vias by using a high temperature adhesion/barrier material deposition step. The adhesion/barrier material is deposited over a channel conductor in the semiconductor dielectric with the semiconductor wafer at high temperature over 400.degree. C., the temperature is reduced below 150.degree. C., and then seed material is deposited so it is not exposed to temperatures above 150.degree. C. which cause agglomeration.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.