Apparatus and method for controlling plasma uniformity in a semiconductor wafer processing system
US6232236A · kind A · utility
84Cited by
7References
32Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 3, 1999 |
| Grant date | May 15, 2001 |
| Priority date | — |
| Expiry date | Aug 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32165
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for controlling a plasma in a plasma processing system. The apparatus comprises a wafer support pedestal surrounded by a process kit that is driven by an RF signal. Both an electrode (cathode) in the pedestal and the process kit are driven with an RF signal to establish a primary plasma above the pedestal and a secondary plasma above the process kit.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.