Photoresist monomers, polymers thereof, and photoresist compositions containing the same
US6235448A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Nov 24, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/265
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
The present invention relates to monomers and polymers prepared therefrom, which are suitable for forming photoresist compositions employed in lithography processes using a deep ultraviolet light source, in particular an ArF light source. According to the present invention, novel monomers represented by Chemical Formula 1, are provided: ##STR1## wherein R represents a C.sub.1 -C.sub.10 alkyl group, and m is the number 1 or 2. as well as copolymers prepared by using said monomers as represented by Chemical Formula 8: ##STR2## wherein R represents a C.sub.1 -C.sub.10 alkyl group; R' represents H or --COOH; m is the number 1 or 2; n is a number from 1 to 3; and X represents CH.sub.2, NH or O; and a, b and c represent the number of repeating of the respective monomers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.