Low-k photoresist removal process
US6235453A · kind A · utility
39Cited by
5References
7Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 7, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Jul 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02052
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit and a method of removing photoresist is described. The process described uses a low oxygen gas or non-oxygen gas plasma that removes the photoresist and provides a protective surface layer over the low-k dielectric material. The low-k dielectric material is part of a dielectric stack. After exposure to the gas plasmas the integrated circuit is subjected to solvent.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.