Method for forming a semiconductor device using an etch stop layer
US6235603A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 12, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Jul 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/716
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A first etch stop layer (14) is formed over a semiconductor substrate (10). A first dielectric layer (20) is formed over the first etch stop layer (14). An opening (22) is formed in the first dielectric layer (20). The opening (22) extends through the first dielectric layer (20) and exposes a first conductive material (18) under the first dielectric layer (20). A second conductive material (30) is deposited over the semiconductor substrate (10) and within the opening (22). The second conductive material (30) electrically contacts the first conductive material (18). Portions of the second conductive material (30) lying outside of the opening (22) are removed and then portions of the first dielectric layer (20) are removed to expose portions of the first etch stop layer (14).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.