Method for rapidly dechucking a semiconductor wafer from an electrostatic chuck utilizing a hysteretic discharge cycle
US6236555A · kind A · utility
27Cited by
4References
19Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Apr 19, 1999 |
| Grant date | May 22, 2001 |
| Priority date | — |
| Expiry date | Apr 19, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T279/23
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for rapidly dechucking a wafer from a chuck by applying a voltage that between the wafer and the electrode that performs a hysteretic discharge cycle such that residual charge is removed. The voltage is a decaying oscillating waveform that provides a decaying electric field at the wafer to chuck surface interface. The form of this field at this interface is very important to achieving rapid dechucking of less than 200 mS.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.