Method of coating amorphous silicon film
US6239040A · kind A · utility
1Cited by
5References
20Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Oct 30, 1998 |
| Grant date | May 29, 2001 |
| Priority date | — |
| Expiry date | Oct 30, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of coating an amorphous silicon layer. An amorphous silicon layer is directly deposited on the polysilicon nodes by a self-aligned method. A chemical mechanical polishing process is performed to control the thickness of the amorphous silicon layer. No additional photoresist is used during the whole processes. Therefore, the duration for deposition can be reduced and the quality of the amorphous silicon film is improved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.