Switched body SOI (silicon on insulator) circuits and fabrication method therefor

US6239649A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• Claude L. Bertin · Venice, US
• John J. Ellis-Monaghan · Grand Isle, US
• Erik L. Hedberg · South Burlington, US
• Terence B. Hook · Jericho, US
• Jack A. Mandelman · Stormville, US
• Edward J. Nowak · South Burlington, US
• Wilbur D. Pricer · Burlington, US
• Minh H. Tong · Saint Johnsbury Center, US
• William R. Tonti · South Burlington, US

Key dates

• Filing date: Apr 20, 1999
• Grant date: May 29, 2001
• Expiry date: Apr 20, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H03K2217/0018
• WIPO field: Basic communication processes
• WIPO sector: Electrical engineering

Abstract

Circuits with SOI devices are coupled to a body bias voltage via a switch for selectively connecting the body bias voltage signals to the SOI device body. NMOS or PMOS SOI devices are used for the switched body SOI device and a FET is used for the switch and the gate terminal of the SOI device is connected to the FET device. The gate of the SOI device controls the FET switch connection of the body bias voltage signals to the SOI device to adjust the threshold value of the SOI device. Logic circuits incorporating the SOI devices are also disclosed, and the fabrication process for the SOI devices as well.