Methods and apparatus for treating a semiconductor substrate
US6242366A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 17, 1999 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Feb 17, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY02E60/50
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A liquid short-chain polymer of the general formula R.sub.a Si(OH).sub.b or (R).sub.a SiH.sub.b (OH).sub.c is deposited on a substrate, where a+b=4 or a+b+c=4, respectively, a, b and c are integers, R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis. The short-chain polymer is then subjected to further polymerization to form an amorphous structure of the general formula (R.sub.x SiO.sub.y).sub.n, where x and y are integers, x+y=4, x.noteq.0, n equals 1 to .infin., R is a carbon-containing group and a silicon to carbon bond is indicated by Fourier Transfer Infrared analysis.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.