Diode connected to a magnetic tunnel junction and self aligned with a metallic conductor and method for forming the same
US6242770A · kind A · utility
46Cited by
11References
24Claims
0Family size
Inventors
Key dates
| Filing date | Aug 31, 1998 |
| Grant date | Jun 5, 2001 |
| Priority date | — |
| Expiry date | Aug 31, 2018 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB82Y10/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A magneto-resistive memory cell and a method of forming the memory cell, includes a substrate, a single crystalline semiconductor diode formed in the substrate; and a first thin film conductor recessed in the substrate, and a second thin film conductor form above a magnetic tunnel junction formed on the diode. The diode and first thin film conductor share a non-planar common surface, such that the metal tunnel junction is a predetermined distance from the thin film conductor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.