Patent · US Expired

Using polysilicon fuse for IC programming

US6242790A · kind A · utility

31Cited by
2References
6Claims
0Family size

Assignee

Inventors

Key dates

Filing dateAug 30, 1999
Grant dateJun 5, 2001
Priority date
Expiry dateAug 30, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L2924/0002
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

There is provided a new polysilicon fuse structure for implementation within integrated circuit devices so as to permit programming of the same. The polysilicon fuse structure includes a first electrical contact region, a second electrical contact region, and multiple fuse regions interconnected between the first electrical contact region and the second electrical contact region. The multiple fuse regions are formed of a plurality of strips, each being of a different width and/or length, which are disposed in a spaced-apart relationship so as to form a small opening between adjacent strips. A number of the plurality of strips is selectively blown when a predetermined amount of current is passed from one of the first and second electrical contact regions through the plurality of strips to the other one of the first and second electrical contact regions so to limit the current passing to an integrated circuit device connected thereto during normal operating conditions.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.