Method of forming bonding pad
US6245380A · kind A · utility
3Cited by
6References
23Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Feb 11, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/14
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming bonding pad commences by forming a conformal barrier layer on a provided inter-metal dielectric layer. A first metal layer is formed on the barrier layer to partially fill the trench. A thin glue layer is formed on the first metal layer. A second metal layer is formed on the glue layer to fill the trench. The second metal layer, the glue layer, the first metal layer and the barrier layer are partially removed to expose the dielectric layer. A bonding pad structure is thus formed in the trench. The bonding pad structure comprises a first metal pad and a second metal pad.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.