Method and apparatus for control of critical dimension using feedback etch control
US6245581A · kind A · utility
126Cited by
3References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 19, 2000 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Apr 19, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides for a method and an apparatus for controlling critical dimensions. At least one run of semiconductor devices is processed. A critical dimension measurement is performed upon at least one of the processed semiconductor device. An analysis of the critical dimension measurement is performed. A secondary process upon the semiconductor device in response to the critical dimension analysis is performed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.