Low temperature method for forming a thin, uniform layer of aluminum oxide
US6245606A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 20, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Oct 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02178
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention pertains generally to forming thin aluminum oxides at low temperatures, and more particularly to forming uniformly thick, aluminum gate oxides. We disclose a low temperature method for forming a thin, uniform aluminum gate oxide 16 on a silicon surface 12. This method includes providing a partially completed integrated circuit on a semiconductor substrate 10 with a clean, hydrogen terminated or atomically flat, silicon surface 12; forming a uniformly thick aluminum layer 13; and stabilizing the substrate at a first temperature. The method further includes exposing the aluminum layer to an atmosphere 14 including ozone, while maintaining the substrate 10 at the first temperature. In this method, the exposing step creates a uniformly thick, aluminum oxide film 16. This method is suitable for room temperature processing.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.