Mosfet with localized amorphous region with retrograde implantation
US6245618A · kind A · utility
139Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 3, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | Feb 3, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/017
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device with improved short channel characteristics is formed with a buried amorphous region comprising a retrograde impurity region having the impurity concentration peak of the semiconductor substrate. The buried amorphous region, formed below the channel region, suppresses diffusion of displaced atoms and holes from the source/drain regions and reduces the resistance against latch-up phenomenon, thereby improving short channel characteristics.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.