Dry Air/N2 post treatment to avoid the formation of B/P precipitation after BPSG film deposition
US6245688A · kind A · utility
1Cited by
6References
27Claims
0Family size
Assignee
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Key dates
| Filing date | May 27, 1999 |
| Grant date | Jun 12, 2001 |
| Priority date | — |
| Expiry date | May 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method to store wafers, immediately after the deposition of a layer of BPSG, into an environment of dry air or dry N.sub.2 or dry Ar or a N.sub.2 O plasma chamber. This storage can occur over a variable period of time and with a variable delay between BPSG deposition and BPSG flow, dependent on which storage environment is applied. The surface of the deposited layer of BPSG is, in doing so, not exposed to H.sub.2 O and the formation of unstable irregularities on the surface of the deposited BPSG is prevented.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.