Chiarn-Lung Lee
6Patents
3h-index
8Co-inventors
39Inventor score
Filing activity: Oct 4, 1996 → May 9, 2000
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6090675A | Formation of dielectric layer employing high ozone:tetraethyl-ortho-silicate ratios during chemical vapor deposition | Electricity | 32 | Expired |
| US5865900A | Etch method for removing metal-fluoropolymer residues | Emerging Cross-Sectional Technologies | 12 | Expired |
| US5935876A | Via structure using a composite dielectric layer | Electricity | 9 | Expired |
| US6294483A | Method for preventing delamination of APCVD BPSG films | Electricity | 3 | Expired |
| US6440859B1 | Method for etching passivation layer of wafer | Electricity | 2 | Expired |
| US6245688A | Dry Air/N2 post treatment to avoid the formation of B/P precipitation after BPSG film deposition | Electricity | 1 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.