Method for fabricating a field effect-controlled semiconductor component

US6248620A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Helmut Strack · Hersbruck, DE
• Helmut Gassel · Farmington Hills, US
• Joost Larik · Poing, DE

Key dates

• Filing date: Jan 24, 2000
• Grant date: Jun 19, 2001
• Expiry date: Jan 24, 2020

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/256

Abstract

A method for fabricating field effect-controlled semiconductor components, such as e.g. but not exclusively MIS power transistors. The field effect-controllable semiconductor component has a semiconductor substrate of a first conductivity type and a gate insulator layer on the surface of the semiconductor substrate. A well of a second conductivity type is produced in the semiconductor substrate by implanting first impurity atoms. A semiconductor layer having a first predetermined thickness is produced on the gate insulator layer prior to the production of the well. The semiconductor layer is reduced in a predtdermined region to obtain a residual layer having a second predetermined thickness, such that the semiconductor layer acts as an implantation barrier outside the predetermined region when the well is produced.