Process for fabricating a flash memory device

US6248629A · kind A · utility

Assignee

• Advanced Micro Devices, Inc. · US

Inventors

• Yow-Juang Liu · San Jose, US
• Gu-Fung David Tsuei · Sunnyvale, US
• Jian Chen · San Jose, US

Key dates

• Filing date: Mar 18, 1998
• Grant date: Jun 19, 2001
• Expiry date: Mar 18, 2018

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10B41/49

Abstract

A method for manufacturing a non-volatile memory device, the device having a core memory cell region and a periphery region, comprising the steps of: forming memory cell gate structures in the core memory cell region; forming active regions adjacent to the gate structure through a blanket implant; forming an implant/etch mask; implanting an impurity into one of the active regions; etching an oxide layer in the implant region; and forming active devices in the periphery region. In a further aspect, the method comprises method of performing a self aligned source etch in forming a memory device, comprising: forming resist spacers adjacent to the channel regions of the memory device; and etching the oxide layer.