Compositions for cleaning organic and plasma etched residues for semiconductors devices
US6248704A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 3, 1999 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | May 3, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC11D2111/22
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
A composition for the cleaning of residues from substrates from about 0.01 percent by weight to about 5 percent by weight of one or more fluoride compounds, from about 20 percent by weight to about 50 percent by weight water, from about 20 percent by weight to about 80 percent by weight of an organic amide solvent and from 0 to about 50 weight percent of an organic sulfoxide solvent. The composition has a pH between about 7 and about 10. Additionally, the composition optionally contains corrosion inhibitors, chelating agents, surfactants, acids and bases. In use of the composition, a substrate is contacted with the composition for a time and at a temperature that permits cleaning of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.