Copolymer resin, preparation thereof, and photoresist using the same
US6248847A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 10, 1998 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Dec 10, 2018 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/0045
- WIPO fieldOrganic fine chemistry
- WIPO sectorChemistry
Abstract
The present invention relates to a copolymer resin for ultra-shortwave light source such as KrF or ArF, process for preparation thereof, and photoresist comprising the same resin. The copolymer resin according to the present invention is easily prepared by conventional radical polymerization due to the introduction of norbonyl(meth)acrylate unit to a structure of copolymer for photoresist. The resin has high transparency at 193 nm wavelength, provides increased etching resistance and enhanced adhesive strength due to a hydrophilic functional group in the norbonyl group, and shows excellent resolution of 0.15 .mu.m in practical experiment of patterning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.