Light emitting semiconductor device using gallium nitride group compound
US6249012A · kind A · utility
7Cited by
20References
9Claims
0Family size
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Key dates
| Filing date | Oct 23, 1997 |
| Grant date | Jun 19, 2001 |
| Priority date | — |
| Expiry date | Oct 23, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10H20/8215
Abstract
A semiconductor device having an n-type layer of gallium nitride that is doped with silicon and has a resistively ranging from 3.times.10.sup.-1 .OMEGA.cm to 8.times..sup.10-3 .OMEGA.cm or a carrier concentration ranging from 6.times.10.sup.16 /cm.sup.3 to 3.times.10.sup.18 /cm.sup.3.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.