Silicon-on-insulator non-volatile random access memory device

US6252275A · kind A · utility

Assignee

• International Business Machines Corporation · US

Inventors

• John M. Aitken · South Burlington, US
• Steven W. Mittl · South Burlington, US
• Alvin W. Strong · South Burlington, US

Key dates

• Filing date: Jan 7, 1999
• Grant date: Jun 26, 2001
• Expiry date: Jan 7, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D86/201

Abstract

A non-volatile random access memory (NVRAM) structure comprising an injector element in a single crystal silicon substrate; an insulator layer over the substrate; a silicon-on-insulator (SOI) layer over the insulator layer; and a sensing element in the SOI layer overlying the injector element. The NVRAM structure may further comprise a gate above the SOI layer, a floating gate in the insulator layer, or both.