Isotropic dry cleaning process for noble metal integrated circuit structures
US6254792A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 8, 1998 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Jun 8, 2018 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/906
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A method for removing from a microelectronic device structure a noble metal residue including at least one metal selected from the group consisting of platinum, palladium, iridium and rhodium, by contacting the microelectronic device structure with a cleaning gas including a reactive halide composition, e.g., XeF.sub.2, SF.sub.6, SiF.sub.4, Si.sub.2 F.sub.6 or SiF.sub.3 and SiF.sub.2 radicals. The method may be carried out in a batch-cleaning mode, in which fresh charges of cleaning gas are successively introduced to a chamber containing the residue-bearing microelectronic device structure. Each charge is purged from the chamber after reaction with the residue, and the charging/purging is continued until the residue has been at least partially removed to a desired extent. Alternatively, the cleaning gas may be continuously flowed through the chamber containing the microelectronic device structure, until the noble metal residue has been sufficiently removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.