Amorphous dielectric capacitors on silicon
US6255122A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Apr 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/682
Abstract
High-capacity capacitors and gate insulators exhibiting moderately high dielectric constants with surprisingly low leakage using amorphous or low temperature films of perovskite type oxides including a titanate system material such as barium titanate, strontium titanate, barium strontium titanate (BST), lead titanate, lead zirconate titanate, lead lanthanum zirconate titanate, barium lanthanum titanate, a niobate, aluminate or tantalate system material such as lead magnesium niobate, lithium niobate lithium tantalate, potassium niobate and potassium tantalum niobate, a tungsten-bronze system material such as barium strontium niobate, lead barium niobate, barium titanium niobate, and Bi-layered perovskite system material such as strontium bismuth tantalate, bismuth titanate deposited directly on a silicon surface at temperatures about 450.degree. C. or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.