Etching process of CoSi2 layers

US6255227A · kind A · utility

Assignee

• INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM VZW · BE

Inventors

• Ricardo A. Donaton · Somers, US
• Karen Maex · Herent, BE
• Rita Verbeeck · Rotselaar, BE
• Philippe Jansen · Olen, BE
• Rita Rooyackers · Kessel-Lo, BE
• Ludo Deferm · Beverlo, BE
• Mikhail Baklanov · Veltem-Beisem, BE

Key dates

• Filing date: Jan 6, 2000
• Grant date: Jul 3, 2001
• Expiry date: Jan 6, 2020

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y02P70/50
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

The present invention relates to methods for controlling the etching rate of CoSi.sub.2 layers by adjusting the pH of an HF-based solution to obtain the desired etch rate. The pH of the HF-based solution may be adjusted by adding pH modifying chemicals to the solution. A further aspect of the invention is an improved method for manufacturing Schotky barrier infared detectors employing the controlled etching step. A method for reducing drain induced barrier lowering in an active transistor having a small gate length is also provided.