SOI bonding structure
US6255731A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Jul 28, 1998 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Jul 28, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/09701
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor substrate adapted to giga-scale integration (GSI) comprises a support, at least the surface of which is made of semiconductor, an electroconductive material layer, an insulating layer and a semiconductor layer arranged sequentially in the above order. The electroconductive material layer has at least in part thereof an electroconductive reacted layer obtained by causing two metals, a metal and a semiconductor, a metal and a metal-semiconductor compound, a semiconductor and a metal-semiconductor compound, or two metal-semiconductor compounds to react each other. An electroconductive reaction terminating layer that is made of a material that does not react with the reacted layer is arranged between the reacted layer and the insulating layer or the support.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.