Rapid on chip voltage generation for low power integrated circuits
US6255900A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 12, 1999 |
| Grant date | Jul 3, 2001 |
| Priority date | — |
| Expiry date | Apr 12, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/08
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
An on chip voltage generation circuit is provided suitable for use on integrated circuits such as flash memory devices with a low power supply voltage (e.g., 2.7 to 3.6 volts). A voltage boost circuit is coupled to the supply voltage input and to a boost signal, which boosts the on-chip voltage at a node on the integrated circuit in response to a transition of the boost signal. The voltage boost circuit has a first mode which in response to the transition boosts the on-chip voltage at a first rate of boosting until a first threshold, and a second mode which in response to the transition boosts the on-chip voltage at a second rate of boosting until a second threshold. The second rate of boosting in the preferred system is slower than the first rate of boosting. A detection circuit is coupled to the node on the integrated circuit which receives the on-chip voltage, and to the voltage boost circuit. The detection circuit signals the voltage boost circuit when the node reaches the first threshold, and signals the voltage boost circuit when the node reaches the second threshold. According to one aspect of the invention, the first threshold is reached within less than 5 nanoseconds, and …
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.