Treating method and apparatus utilizing chemical reaction
US6258244A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | May 13, 1998 |
| Grant date | Jul 10, 2001 |
| Priority date | — |
| Expiry date | May 13, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76256
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
In order to effectively remove gas molecules of a by-product in a chemical reaction in a solution so as to achieve high efficiency, high rate, and uniformity of the chemical reaction in the solution and in order to realize formation of a semiconductor substrate applicable to production of SOI structure and realize formation of a semiconductor substrate in which a light-emitting element or a gas sensor can be formed, on the basis of an inexpensive silicon substrate, the chemical reaction is performed while the concentration of a gas dissolved in a reaction solution in a reaction vessel is always controlled to be not more than the solubility thereof during the reaction.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.