Method of surface treatment of semiconductor substrates
US6261962A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 1, 1997 |
| Grant date | Jul 17, 2001 |
| Priority date | — |
| Expiry date | Aug 1, 2017 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A sidewall passivation layer is deposited on an etched feature in a semiconductor substrate with a hydrocarbon deposition gas by introducing H.sub.2, determining certain mixture percentages for the hydrocarbon gas/H.sub.2 mix at which the etch rate for the substrate peaks, the etch rate begins to rise from a generally steady state, and/or the etch rate falls to zero, and then maintaining the mixture percentage within a selected range. Where the hydrocarbon gas/H.sub.2 mix is maintained at a percentage between the steady-state etch rate percentage and the peak etch rate percentage, then relatively high ion energies are used. Where the hydrocarbon gas/H.sub.2 mix is maintained at a percentage between the peak etch rate percentage and the percentage where the etch rate falls to zero, then relatively low ion energies are used. High aspect-ratio features in a semiconductor substrate can be produced by performing alternating etching and depositing a passivation layer on the substrate, where the deposition is performed according to the above-described deposition process.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.