Process chamber having improved gas distributor and method of manufacture
US6263829A · kind A · utility
67Cited by
42References
55Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 22, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jan 22, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/455
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process chamber 15 for processing a substrate 30, such as a semiconductor wafer, comprises a support 20 having a surface 25 for supporting the substrate 30. A gas distributor 50 in the chamber comprises a gas manifold 110 comprising at least one insert 140 having an orifice 115 for passing gas from the gas manifold 110 into the process chamber 15. Preferably, the gas manifold 110 extends about a perimeter 130 of the substrate 30 and comprises a plurality of inserts 140 made from dielectric material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.