Circuitized semiconductor structure and method for producing such
US6265075A · kind A · utility
9Cited by
31References
29Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 20, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jul 20, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/31678
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A circuitized semiconductor structure comprising a layer of dielectric material, a catalyst seed layer above the layer of dielectric material, a layer of photoimageable dielectric material on the catalyst seed layer and having openings therein, a nickel layer in the openings and a layer of copper in the openings above the nickel layer and being coplanar with the top of the layer of dielectric material is provided, along with a method for its fabrication.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.