Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial base
US6265275A · kind A · utility
22Cited by
3References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 1, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Jun 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/138
Abstract
The collector of a vertical bipolar transistor is selectively doped by a first implantation of dopants before the epitaxy of the base, and is selectivly doped by a second implantation of dopants through the epitaxial base. Two implanted zones with different widths are obtained. The base of the vertical bipolar transistor is thinned and the collector resistance is optimized.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.